Title :
Electrochemical characterization of InP and GaAs based structures for space solar cell applications
Author :
Faur, Maria ; Faur, Mircea ; Flood, Dennis J. ; Jenkins, Phillip P. ; Goradia, Manju ; Wilt, David M.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on InP and GaAs, using a newly developed electrolyte based on HF, CH3COOH, o-H3 PO4, C9H14CIN and NH3F 2. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided
Keywords :
III-V semiconductors; crystal defects; deep levels; electrochemistry; electrolytes; gallium arsenide; indium compounds; photovoltaic power systems; radiation effects; solar cells; space vehicle power plants; surface states; C9H14CIN; CH3COOH; GaAs; HF; InP; NH3F2; deep states; electrochemical characterization; electrolyte; energy distribution; fabrication process optimization; o-H3PO4; radiation induced defects; space solar cell; surface states; Capacitance-voltage characteristics; Etching; Gallium arsenide; Hafnium; Human computer interaction; Indium phosphide; Nonhomogeneous media; Photovoltaic cells; Semiconductor materials; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520646
