• DocumentCode
    3000449
  • Title

    A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO2 technology for 65nm and beyond applications

  • Author

    Wang, C.Y. ; Wu, W.J. ; Yang, C.M. ; Tseng, W.H. ; Chen, H.C. ; Bao, T.I. ; Lo, Henry ; Wang, J. ; Yu, C.H. ; Liang, M.S.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Ltd., Hsing-Chu, Taiwan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    333
  • Lastpage
    336
  • Abstract
    Supercritical C02 technology for single and dual damascene post etch stripping and clean was successfully demonstrated on 65nm technology node. Both bulk film composition analysis and electrical performance on 300mm have been investigated in the present work. With superior compatibility for porous low-k materials, complete removal of photo resist and residue with better leakage and RC delay performance was achieved for the first time.
  • Keywords
    dielectric materials; etching; integrated circuit technology; photoresists; porous materials; surface cleaning; 300 mm; 65 nm; CO2; RC delay performance; bulk film composition analysis; carbon dioxide technology; photo resist; porous low-k dual damascene; porous low-k materials; post etch stripping; supercritical technology; Ash; Cleaning; Curing; Dielectric films; Etching; Plasma applications; Plasma materials processing; Plasma properties; Plasma x-ray sources; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419148
  • Filename
    1419148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3000449