Direct plating of Cu on ALD TaN for 45nm node Cu BEOL metallization

Author

Shih, C.H. ; Su, H.W. ; Lin, C.J. ; Ko, T. ; Chen, C.H. ; Huang, J.J. ; Chou, S.W. ; Peng, C.H. ; Hsieh, C.H. ; Tsai, M.H. ; Shue, Winston S. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

337

Lastpage

340

Abstract

Direct electro-deposition of a highly conformal and adherent Cu seed on ALD TaN by means of electro-grafting technique is presented. Both the adhesion of Cu seed to the underlying ALD TaN and EM lifetime performance were greatly enhanced by electro-grafting process, while the benefit of low via and line resistance of ALD TaN were maintained. This direct plated Cu seed layer on ALD TaN was demonstrated to successfully extend the current ECP to 45nm-node metallization and beyond.

Keywords

atomic layer deposition; copper; electrodeposition; electromigration; integrated circuit metallisation; tantalum compounds; 45 nm; Cu seed layer; Cu-TaN; EM lifetime performance; adhesion; copper BEOL metallization; copper direct plating; current ECP; electro-deposition; electro-grafting technique; Adhesives; Atherosclerosis; Copper; Electromigration; Filling; Geometry; Manufacturing industries; Metallization; Semiconductor device manufacture; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419149

Filename

1419149