Title :
Growth behavior of epitaxial semiconductor axial nanowire heterostructures
Author :
Zou, J. ; Paladugu, M. ; Guo, Y.N. ; Zhang, X. ; Auchterlonie, G.J. ; Joyce, H.J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C. ; Kim, Y.
Author_Institution :
Sch. of Eng., Univ. of Queensland, St Lucia, QLD
fDate :
July 28 2008-Aug. 1 2008
Abstract :
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanowires; semiconductor growth; wide band gap semiconductors; GaAs; InAs; axial growth; epitaxial semiconductor axial nanowire heterostructures; growth behavior; lateral misfit strain relaxation; vapor-liquid-solid mechanism; Capacitive sensors; Chemicals; Diffraction; Electron microscopy; Epitaxial growth; Gallium arsenide; Image segmentation; Lattices; Physics; Transmission electron microscopy; Crystal Growth; epitaxy; heterostructues; nanowires; nucleation and growth; vapor-liquid-solid;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802094
