DocumentCode :
3000611
Title :
Sidewall effects of MBE grown CdTe for MWIR HgCdTe photoconductors
Author :
Zhang, J. ; Westerhout, R.J. ; Tsen, G.K.O. ; Antoszewski, J. ; Yang, Y. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Perth, WA
fYear :
2008
fDate :
July 28 2008-Aug. 1 2008
Firstpage :
82
Lastpage :
85
Abstract :
The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared Hg1-xCdxTe material using molecular beam epitaxy (MBE) grown CdTe film as the passivation layer. In order to emphasize the importance of the CdTe passivating layer, HgCdTe photoconductors with and without the sidewall CdTe passivation were fabricated. The photoconductor with its sidewalls passivated shows significantly higher responsivity than the one without sidewall passivation. Conductance-voltage characteristics of capacitor using CdTe between HgCdTe and metal contacts were made in studying insulating property of the passivation film. Scanning electron microscopy (SEM) micrographs and X-ray diffraction (XRD) spectra were included in order to investigate the structural properties of the CdTe passivation film.
Keywords :
II-VI semiconductors; X-ray diffraction; cadmium compounds; capacitors; mercury compounds; molecular beam epitaxial growth; photoconducting devices; scanning electron microscopy; semiconductor epitaxial layers; HgCdTe-CdTe; MBE; MWIR photoconductors; SEM; X-ray diffraction; XRD; capacitor; conductance-voltage characteristics; insulating property; metal contacts; molecular beam epitaxy; responsivity; scanning electron microscopy; semiconductor-passivating layer interfaces; sidewall effects; structural properties; Dielectric devices; Dielectric materials; Mercury (metals); Molecular beam epitaxial growth; Passivation; Photoconducting materials; Photoconductivity; Scanning electron microscopy; Semiconductor materials; Tellurium; CdTe; HgCdTe photoconductive device; Mid-wave infrared; Passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
ISSN :
1097-2137
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2008.4802097
Filename :
4802097
Link To Document :
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