• DocumentCode
    3000687
  • Title

    Quantum corrections to conductivity for semiconductors with various structures: Alavi-Rouhani equation versus Hikami(et.al.,) equation

  • Author

    Alavi, S.A. ; Tatar, A.

  • Author_Institution
    Dept. of Phys., Tarbiat Moallem Univ. of Sabzevar, Sabzevar
  • fYear
    2008
  • fDate
    July 28 2008-Aug. 1 2008
  • Firstpage
    101
  • Lastpage
    104
  • Abstract
    We study the quantum corrections to the conductivity (magnetoresistance) for semiconductors with various structures at different temperatures. We show that the exact analytical expression derived in our previous paper [1], is in better agreement than the existing equation i.e. Hikami (et.al.,) expression [2], with the experimental data specially in low temperatures. The experimental data of heterostructures including heavily doped strongly disordered heterostructures. On the other hand from theoretical point of view we observe that our equation is also rich because it establishes a strong relationship between quantum corrections to the conductivity and the quantum symmetry Suq (2). As a result we show that the quantum corrections to the conductivity is the trace of Green function made by generator of Suq (2) algebra, so the quantum corrections to the conductivity can be express as a sum of an infinite number of Feynman diagrams exactly in the same way as quantum field theory.
  • Keywords
    algebra; integrated optoelectronics; magnetoresistance; quantum optics; Alavi-Rouhani equation; Feynman diagrams; Green function; magnetoresistance; quantum corrections; quantum field theory; quantum symmetry; semiconductor conductivity; Conductivity; Data analysis; Electrons; Equations; Magnetic analysis; Magnetic fields; Magnetoresistance; Physics; Quantum mechanics; Temperature; Drude conductivity; Feynman diagrams; Harper Hamiltonian; Quantum correction to conductivity; Quantum groups; heterostructures; magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
  • Conference_Location
    Sydney, SA
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-2716-1
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2008.4802101
  • Filename
    4802101