Title :
Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding
Author :
Sleptsuk, N. ; Korolkov, O. ; Toompuu, J. ; Rang, T.
Author_Institution :
Dept. of Electron., Tallinn Univ. of Technol., Tallinn, Estonia
Abstract :
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique used for stacks allows to solve many packaging problems, in particular - reduction of thermal resistance and incresing in operation temperature.
Keywords :
Schottky diodes; deep level transient spectroscopy; silicon compounds; thermal conductivity; welding; DLTS; JBS stacks; SiC; deep level spectroscopy; diffusion welding; forward voltage; junction barrier Schottky chips; reverse voltage; series resistance; thermal resistance; Capacitance; Metallization; Schottky diodes; Semiconductor device measurement; Silicon carbide; Welding;
Conference_Titel :
Electronics Conference (BEC), 2010 12th Biennial Baltic
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-7356-4
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2010.5630910
