DocumentCode
3000719
Title
Complementary multi guard ring JBS structures: Numerical analysis
Author
Koel, Ants ; Rang, Toomas ; Rang, Galina
Author_Institution
MicroLink Estonia Ltd., Tallinn, Estonia
fYear
2010
fDate
4-6 Oct. 2010
Firstpage
85
Lastpage
88
Abstract
The paper gives short overview of SiC based complementary multi guard ring JSB structures and the numerical model to be used in the analysis. The static U-I characteristics are under investigation. The geometry and temperature influence has been analyzed.
Keywords
Schottky barriers; numerical analysis; silicon compounds; wide band gap semiconductors; SiC; geometry influence; multiguard ring junction barrier Schottky structures; numerical analysis; static U-I characteristics; temperature influence; Electric fields; Geometry; Junctions; Numerical models; Schottky barriers; Silicon carbide; Temperature; JBS structures; Schottky junction; SiC; U-I characteristics; numerical simulation; pn-junction; temperature influence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Conference (BEC), 2010 12th Biennial Baltic
Conference_Location
Tallinn
ISSN
1736-3705
Print_ISBN
978-1-4244-7356-4
Electronic_ISBN
1736-3705
Type
conf
DOI
10.1109/BEC.2010.5630911
Filename
5630911
Link To Document