Title :
Complementary multi guard ring JBS structures: Numerical analysis
Author :
Koel, Ants ; Rang, Toomas ; Rang, Galina
Author_Institution :
MicroLink Estonia Ltd., Tallinn, Estonia
Abstract :
The paper gives short overview of SiC based complementary multi guard ring JSB structures and the numerical model to be used in the analysis. The static U-I characteristics are under investigation. The geometry and temperature influence has been analyzed.
Keywords :
Schottky barriers; numerical analysis; silicon compounds; wide band gap semiconductors; SiC; geometry influence; multiguard ring junction barrier Schottky structures; numerical analysis; static U-I characteristics; temperature influence; Electric fields; Geometry; Junctions; Numerical models; Schottky barriers; Silicon carbide; Temperature; JBS structures; Schottky junction; SiC; U-I characteristics; numerical simulation; pn-junction; temperature influence;
Conference_Titel :
Electronics Conference (BEC), 2010 12th Biennial Baltic
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-7356-4
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2010.5630911
