Title :
Reducing breakdown voltages in impact ionization Metal-Oxide-Semiconductor (I-MOS) devices using hetero structure
Author :
Nematian, Hamed ; Fathipour, Morteza
Author_Institution :
Fac. of Electr. & Electron. Eng., Malek-e-Ashtar Univ. of Technol., Tehran
fDate :
July 28 2008-Aug. 1 2008
Abstract :
In order to decrease bias voltages in IMOS devices we have proposed a new IMOS structure with Si/Si-Ge channel in this paper. In comparison with previously reported, single gate SOI IMOS and SGOI IMOS structures, this device can provide higher reduction in the source voltage as well as in threshold voltage. Moreover, the proposed structure provides considerable reduction in off-state current, while preserving the on-state current.
Keywords :
Ge-Si alloys; MIS devices; impact ionisation; semiconductor materials; IMOS devices; SiGe; bias voltages; breakdown voltages; heterostructure; impact ionization metal-oxide-semiconductor devices; source voltage reduction; threshold voltage; Breakdown voltage; FETs; Germanium; Impact ionization; MOSFET circuits; Photonic band gap; Semiconductor process modeling; Telephony; Temperature; Threshold voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802104
