DocumentCode :
3000763
Title :
Low-voltage flexible organic circuits with molecular gate dielectrics
Author :
Klauk, Hagen ; Halik, Marcus ; Eder, Florian ; Schmid, Günter ; Dehm, Christine ; Rohde, Dirk ; Brederlow, Ralf ; Briole, Sylvain ; Maisch, Steffen ; Effenberger, Franz ; Zschieschang, Ute
Author_Institution :
Infineon Technol., Eriangen, Germany
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
369
Lastpage :
372
Abstract :
In order to reduce the operating voltage of transistors and circuits based on organic semiconductors we have recently developed organic thin film transistors with a 2.5 nm thick molecular self-assembled monolayer (SAM) gate dielectric (1). Thanks to a large gate dielectric capacitance of 9×10-7 F/cm , these TFTs can be operated with supply voltages of less than 2 V and have a record subthreshold swing of 100mV/dec. Here we present results on the first organic inverters and ring oscillators with molecular gate dielectrics, manufactured on glass and on flexible, transparent polymeric substrates. These organic circuits operate with supply voltages as low as 1.5 V and have signal propagation delays as low as a few hundred microseconds per stage.
Keywords :
dielectric materials; invertors; low-power electronics; organic semiconductors; oscillators; signal generators; thin film transistors; flexible organic circuits; gate dielectric; low-voltage circuit; molecular gate dielectrics; operating voltage; organic inverters; organic semiconductors; organic thin film transistors; ring oscillators; self-assembled monolayer; transparent polymeric substrates; Capacitance; Dielectric substrates; Dielectric thin films; Flexible printed circuits; Inverters; Organic semiconductors; Organic thin film transistors; Thick film circuits; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419160
Filename :
1419160
Link To Document :
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