Scattering of carries in δ-doped by Mn InGaAs quantum well with hole-mediated ferromagnetism

Thermodynamic, transport and magnetotransport properties of free charge carriers in the diluted magnetic semiconductor with a quantum well (QW) GaAs/InGaAs/GaAs delta-doped by C and Mn are investigated. For definition of hole density thermodynamic calculations of the composition of the system from free holes, atoms and ions Mn- have been carried out. Calculations of temperature dependence of resistance and magnetoresistance in quantum well have been obtained. The contributions of various hole scattering mechanisms in resistance are analysed. The reasons for occurrence of negative magnetoresistance are explained quantitatively as the reduction of the spin-flip scattering due to aligning spins by magnetic field. The quantitative consistency of the calculated and of the measured temperature dependence of sheet resistance and magnetoresistance were obtained.