Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR) and Secondary Ion Mass Spectrometry (SIMS). A preliminary study on various activation annealing techniques is made, where HgCdTe layers were annealed under Hg overpressures in a closed tube furnace at varying temperatures to either activate arsenic and/or, to eliminate Hg vacancies. Variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) were then utilised to study the Hall effect characteristics of the annealed material.