Title :
Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe
Author :
Tsen, G.K.O. ; Zhang, J. ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J. ; Faraone, L.
Author_Institution :
Sch. of Electr., Univ. of Western Australia, Perth, WA
fDate :
July 28 2008-Aug. 1 2008
Abstract :
Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR) and Secondary Ion Mass Spectrometry (SIMS). A preliminary study on various activation annealing techniques is made, where HgCdTe layers were annealed under Hg overpressures in a closed tube furnace at varying temperatures to either activate arsenic and/or, to eliminate Hg vacancies. Variable field magneto-transport measurements coupled with the quantitative mobility spectrum analysis (QMSA) were then utilised to study the Hall effect characteristics of the annealed material.
Keywords :
Fourier transform spectra; Hall effect; annealing; arsenic; cadmium compounds; infrared spectra; mercury compounds; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; ternary semiconductors; Fourier transform infrared transmission spectrometry; Hall effect; HgCdTe:As; annealing; epilayers; magneto-transport; molecular beam epitaxy; p-type doping; quantitative mobility spectrum analysis; secondary ion mass spectrometry; vacancies; Annealing; Cadmium compounds; Doping; Fourier transforms; Furnaces; Infrared spectra; Magnetic materials; Mass spectroscopy; Mercury (metals); Molecular beam epitaxial growth;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802107
