Title :
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept
Author :
Basler, Thomas ; Pfaffenlehner, Manfred ; Felsl, Hans Peter ; Niedernostheide, F.-J. ; Pfirsch, F. ; Schulze, H.-J. ; Baburske, R. ; Lutz, Josef
Author_Institution :
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
Abstract :
The surge-current ruggedness of free-wheeling diodes can be improved by implementing the self-adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode-side filaments during reverse-recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode-side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p+-areas of the SPEED anode in the low-doped p-type area to avoid high electrical field strengths at the p+p-junction and pinning of anode-side filaments. However, anode-side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge-current capability.
Keywords :
power semiconductor switches; semiconductor device models; semiconductor device reliability; semiconductor diodes; SPEED; anode side filament pinning; backside holes; cathode side filaments; controlled injection; diode surge current capability; diode switching ruggedness; free wheeling diodes; high electrical field strength; p+p-junction; reverse recovery; self-adjusting p emitter efficiency diode concept;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds.2013.0216