Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs

Author

Ohshima, Yoichi ; Mori, Seiichi ; Yoshikawa, Kuniyoshi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

12-13 Jun 1989

Firstpage

105

Lastpage

112

Abstract

An anomalous p⁺ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p⁺ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability

Keywords

CMOS integrated circuits; EPROM; VLSI; aluminium alloys; contact resistance; copper alloys; integrated circuit technology; metallisation; reliability; silicon alloys; titanium; titanium compounds; AlSiCu-TiN-Ti; CMOS VLSIs; EPROMs; contact hole process; contact metallization technology; diffusion layer; interconnection reliability; ion-implantation; oxidation process condition; p⁺ contact resistance; self-aligned contact structure; Boron; CMOS technology; Contact resistance; EPROM; Fabrication; Metallization; Oxidation; Surface resistance; Tin; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.78012

Filename

78012