DocumentCode :
3000889
Title :
Inversion mobility and gate leakage in high-k/metal gate MOSFETs
Author :
Kotlyar, R. ; Giles, M.D. ; Matagne, P. ; Obradovic, B. ; Shifren, L. ; Stettler, M. ; Wang, E.
Author_Institution :
Technol. CAD, Intel Corp., Hillsboro, OR, USA
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
391
Lastpage :
394
Abstract :
For the first time, we show with simulation that the use of a metal gate/high-k stack offers improved mobility over polysilicon/high-k gates stacks while maintaining decreased gate leakage compared to conventional SiO2 stacks, thus allowing high-performance transistor scaling to continue.
Keywords :
MOSFET; electron mobility; leakage currents; SiO2 stacks; gate leakage; high-k/metal gate MOSFETs; high-performance transistor; inversion mobility; polysilicon/high-k gates stacks; Dielectric substrates; Electrons; Frequency; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phonons; Plasma density; Polarization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419167
Filename :
1419167
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3000889
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