Title :
Double boundary trench isolation effects on a stacked gradient homojunction photodiode array
Author :
Jansz, Paul V. ; Hinckley, Steven
Author_Institution :
Phys. Res. Group, Edith Cowan Univ., Perth, WA
fDate :
July 28 2008-Aug. 1 2008
Abstract :
The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.
Keywords :
CMOS integrated circuits; crosstalk; isolation technology; photodiodes; CMOS; crosstalk suppression; double boundary trench isolation effects; enhanced sensitivity; inter-pixel nested ridges; quantum efficiency; stacked gradient homojunction photodiode array; Australia; Crosstalk; Geometrical optics; Geometry; Insulation; Lighting; Optical arrays; Photodiodes; Physics; Solid modeling; CMOS; SiO2; crosstalk; double boundary trench isolation; inter-pixel nested ridges; quantum efficiency; stacked gradient homojunction photodiode;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802115
