DocumentCode :
3000935
Title :
Modeling of Optical Properties in Silicon Nanocrystals
Author :
Karbassian, Farshid ; Ghafoorifard, Hasan ; Mohajerzadeh, Shams
Author_Institution :
Sch. of Electr. Eng., Amirkabir Univ. of Technol., Tehran
fYear :
2008
fDate :
July 28 2008-Aug. 1 2008
Firstpage :
160
Lastpage :
162
Abstract :
While bulk silicon is a poor emitter of light, silicon nanocrystals are shown to be promising materials for light-emitting devices. Despite all the efforts on the fabrication and modeling of silicon nanostructures, the origin of their light emission is still controversial. In this paper we investigate models that have been proposed for silicon nanostructures. A simple model based on solving the Schrodinger equation for quantum dots for light emission in silicon nanocrystals has been proposed. It is shown that quantum confinement is responsible for luminescence in the red portion of spectrum, while the surface passivants are responsible for emission in the blue and green region of the spectrum. The validity of this modeling has been proven by experimental data.
Keywords :
Schrodinger equation; elemental semiconductors; nanostructured materials; photoluminescence; semiconductor quantum dots; silicon; Schrodinger equation; Si; light emission; light-emitting devices; luminescence; optical properties; quantum confinement; quantum dots; silicon nanocrystals; silicon nanostructures; surface passivants; Nanocrystals; Nanostructured materials; Nanostructures; Optical device fabrication; Optical materials; Potential well; Quantum dots; Schrodinger equation; Silicon; Stimulated emission; light-emitting device; luminescence; nanotechnology; silicon nanocrystals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
ISSN :
1097-2137
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2008.4802116
Filename :
4802116
Link To Document :
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