Title :
Combined Super-STEM imaging, EEL and PL spectroscopy of un-doped and Er doped SRSO on Si
Author :
Crowe, Iain F. ; Roschuk, Tyler ; Bangert, Ursel ; Sherliker, Ben ; Halsall, Matthew P. ; Knights, Andrew ; Mascher, Peter
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester
fDate :
July 28 2008-Aug. 1 2008
Abstract :
We present a combined analysis of scanning transmission electron microscopy (STEM) imaging and electron energy loss spectroscopy (EELs) of silicon-rich-silicon-oxide (SRSO) thin film on silicon, grown by plasma enhanced chemical vapour deposition (PECVD). For un-doped samples, strong room temperature luminescence at ~1.6 eV (780 nm) is observed, which we ascribe, by way of plasmon intensity mapping and dasiachemical fingerprintingpsila to phase segregated, highly crystalline, silicon-rich nano-clusters embedded in an amorphous-silicon dioxide (a-SiO2) matrix. For samples doped with increasing concentrations of Er, a quenching of the 1.6 eV line, concurrent with the emergence of a second emission with increasing intensity at ~0.8 eV (1535 nm) is observed. This is attributed to a rapid and efficient, indirect nano-crystal mediated excitation of the Er.
Keywords :
amorphous state; electron energy loss spectra; elemental semiconductors; erbium; phase separation; photoluminescence; plasmons; radiation quenching; scanning-transmission electron microscopy; silicon; silicon compounds; thin films; STEM; Si; Si-SiO2:Er; chemical fingerprinting; electron energy loss spectroscopy; phase segregation; photoluminescence; plasmon intensity mapping; quenching; scanning transmission electron microscopy; temperature 293 K to 298 K; Chemical analysis; Energy loss; Erbium; Image analysis; Plasma temperature; Scanning electron microscopy; Semiconductor thin films; Spectroscopy; Sputtering; Transmission electron microscopy; EELs; PECVD; STEM; nano-crystalline silicon;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802117