Title :
An analytical, transistor-level energy model for SRAM-based caches
Author :
Bellas, Nikos ; Hajj, Ibrahim ; Polychronopoulos, Constantine
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
In this paper, we present a detailed, transistor-level energy model of on-chip caches that use SRAM technology. The energy estimation is based on the work by by Wilson and Jouppi [1994], in which they propose a timing analysis model for SRAM-based caches. Our model uses runtime information of the cache utilization (number of accesses, number of hits, misses, input statistics etc.) gathered during simulation, as well as complexity and internal cache organization parameters (cache size, block size, associativity, banking etc.)
Keywords :
SRAM chips; cache storage; integrated circuit design; integrated circuit modelling; SRAM-based caches; associativity; block size; cache size; cache utilization; complexity; energy estimation; input statistics; internal cache organization parameters; on-chip caches; runtime information; transistor-level energy model; Analytical models; Banking; Circuit simulation; Decoding; Electronic mail; Laboratories; Random access memory; Statistics; Timing; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780129