An analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation

Author

Gondro, Elmar ; Klein, Peter ; Schuler, Franz

Author_Institution

Inst. of Electron., Bundeswehr Univ., Neubiberg, Germany

Volume

6

fYear

1999

fDate

36342

Firstpage

206

Abstract

An analytical model to describe the bias dependent series resistances R_S and R_D of LDD MOSFETs down to quarter micron and below is introduced. Comparing measurement and simulation results of CMOS ring oscillators it has been found that for low voltage applications (V_dd=1 V) an incorrect description of R_S and R_D can cause a simulation error of up to 30% in the delay time of CMOS inverters

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; delays; integrated circuit modelling; low-power electronics; CMOS ring oscillators; LDD MOSFETs; analytical source-and-drain series resistance model; bias dependent series resistances; circuit simulation; delay time; low voltage applications; measurement results; quarter micron MOSFETs; simulation error; simulation results; Analytical models; Channel bank filters; Circuit simulation; Contact resistance; Doping; Electrical resistance measurement; Length measurement; Low voltage; MOSFETs; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780131

Filename

780131