Accurate modeling of simultaneous switching noise in low voltage digital VLSI

Author

Song, Sang Won ; Ismail, Mohammed ; Moon, Gyu ; Kim, Dong Yong

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

Volume

6

fYear

1999

fDate

36342

Firstpage

210

Abstract

The origin and the effect of the simultaneous switching noise (SSN) in CMOS output drivers are explained. A new simultaneous switching noise model which includes the velocity saturation effect is presented. SPICE level 3 simulations for 0.8 μm are used to compare this new model with the other recently reported two SSN models at three different supply voltage levels. The new SSN model is derived and proved with SPICE simulations. The results of the simulations show that the new model is more accurate than the other models, especially in the case of low voltage, and large number of output buffers

Keywords

CMOS digital integrated circuits; SPICE; VLSI; circuit simulation; integrated circuit modelling; integrated circuit noise; low-power electronics; 0.8 micron; CMOS output drivers; SPICE level 3 simulations; SSN models; low voltage digital VLSI; output buffers; simultaneous switching noise; supply voltage levels; velocity saturation effect; Capacitance; Circuit noise; Circuit simulation; Driver circuits; Feedback; Inverters; Low voltage; SPICE; Semiconductor device modeling; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780132

Filename

780132