DocumentCode :
3001263
Title :
High-voltage extension(VBR ≥ 800 V) for smart-power SOI-technologies
Author :
Rotter, Thomas ; Stoisiek, Michael
Author_Institution :
Lehrstuhl fur Elektron. Bauelemente, Univ. Erlangen-Nurnberg, Erlangen, Germany
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
447
Lastpage :
450
Abstract :
In this paper the experimental verification for the incorporation of high-voltage devices (BR ≥ 800 V) within industrial smart-power SOI technologies of only low blocking capability (BR < 150 V) together with properties of a new, ingenious device concept for universal bipolar switches (UBS) are discussed.
Keywords :
bipolar integrated circuits; power integrated circuits; silicon-on-insulator; high-voltage devices; high-voltage extension; ingenious device concept; low blocking capability; smart-power SOI-technologies; universal bipolar switches; Biomembranes; CMOS process; CMOS technology; Dielectric devices; Dielectric substrates; Doping; Etching; Isolation technology; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419184
Filename :
1419184
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3001263
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