• DocumentCode
    3001263
  • Title

    High-voltage extension(VBR ≥ 800 V) for smart-power SOI-technologies

  • Author

    Rotter, Thomas ; Stoisiek, Michael

  • Author_Institution
    Lehrstuhl fur Elektron. Bauelemente, Univ. Erlangen-Nurnberg, Erlangen, Germany
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    447
  • Lastpage
    450
  • Abstract
    In this paper the experimental verification for the incorporation of high-voltage devices (BR ≥ 800 V) within industrial smart-power SOI technologies of only low blocking capability (BR < 150 V) together with properties of a new, ingenious device concept for universal bipolar switches (UBS) are discussed.
  • Keywords
    bipolar integrated circuits; power integrated circuits; silicon-on-insulator; high-voltage devices; high-voltage extension; ingenious device concept; low blocking capability; smart-power SOI-technologies; universal bipolar switches; Biomembranes; CMOS process; CMOS technology; Dielectric devices; Dielectric substrates; Doping; Etching; Isolation technology; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419184
  • Filename
    1419184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3001263