DocumentCode :
3001272
Title :
Role of stress on impurity free disordering of quantu m dots
Author :
Barik, S. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
fYear :
2008
fDate :
July 28 2008-Aug. 1 2008
Firstpage :
221
Lastpage :
224
Abstract :
We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.
Keywords :
III-V semiconductors; chemical interdiffusion; dielectric thin films; gallium arsenide; indium compounds; interstitials; semiconductor quantum dots; silicon compounds; titanium compounds; vacancies (crystal); GaAs; InP; SiO2; TiO2; dielectric layers; impurity free disordering; intermixing; interstitials; quantum dots; stress-induced forced interdiffusion model; vacancy diffusion; Compressive stress; Dielectrics; Equations; Gallium arsenide; Impurities; Indium phosphide; Quantum dots; Rapid thermal annealing; Tensile stress; Thermal stresses; impurity free disordering; quantum dot intermixing; stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
ISSN :
1097-2137
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2008.4802131
Filename :
4802131
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3001272
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