DocumentCode
3001335
Title
Lateral IMPATT diodes in standard CMOS technology
Author
Al-Attar, Talal ; Mulligan, Michael D. ; Lee, Thomas H.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
459
Lastpage
462
Abstract
We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.
Keywords
CMOS integrated circuits; IMPATT diodes; MIMIC; S-parameters; coplanar waveguides; 0.25 micron; 0.4 to 110 GHz; CMOS technology; S-parameter measurements; coplanar waveguides; high frequency power source; lateral IMPATT diodes; monolithically integrated circuit; Breakdown voltage; CMOS technology; Capacitance; Costs; Frequency; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Power generation; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419187
Filename
1419187
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