Title :
Lateral IMPATT diodes in standard CMOS technology
Author :
Al-Attar, Talal ; Mulligan, Michael D. ; Lee, Thomas H.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.
Keywords :
CMOS integrated circuits; IMPATT diodes; MIMIC; S-parameters; coplanar waveguides; 0.25 micron; 0.4 to 110 GHz; CMOS technology; S-parameter measurements; coplanar waveguides; high frequency power source; lateral IMPATT diodes; monolithically integrated circuit; Breakdown voltage; CMOS technology; Capacitance; Costs; Frequency; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Power generation; Semiconductor diodes;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419187
