SEM analysis and selenization of Cu-Zn-Sn sequential films produced by evaporation of metals

Author

Volobujeva, O. ; Mellikov, E. ; Raudoja, J. ; Grossberg, M. ; Bereznev, S. ; Altosaar, M. ; Traksmaa, R.

Author_Institution

Dept. of Mater. Sci., Tallinn Univ. of Technol., Tallinn

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

257

Lastpage

260

Abstract

The formation of Cu₂SnZnSe₄ thin films in the selenization of different sequential metallic and alloy films is investigated. It is shown that the main process of low temperature selenization (up to 300degC) is the formation of different binary copper selenides on the layer surface. High temperature selenization (over 400degC) leads to the formation of Cu₂ZnSnSe₄ phase with some excess of a separate ZnSe phase. The content of ZnSe diminishes with the rise of the selenization temperature, but the selenized films stayed always multiphased. The size of the formed Cu₂ZnSnSe₄ crystals is controlled by the composition of the precursor.

Keywords

copper compounds; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; tin compounds; vapour deposition; zinc compounds; Cu₂SnZnSe₄; SEM; alloy films; binary copper selenides; evaporation; low temperature selenization; selenization temperature; sequential films; thin films; Amorphous materials; Amorphous silicon; Coatings; Crystallization; Fabrication; Passivation; Photovoltaic cells; Plasma temperature; Thermal stresses; Voltage; Cu2ZnSnSe4; precursor composition; selenization; temperature dependence; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802140

Filename

4802140