Title :
Photovoltaic properties of n-Type nanocrystalline-FeSi2/intrinsic-Si/p-Type Si heterojunctions fabricated by facing-targets DC sputtering
Author :
Nomoto, Keita ; Shaban, Mahmoud ; Kondo, Haruhiko ; Yoshitake, Tsuyoshi
Author_Institution :
Dept. of Appl. Sci. for Electron. & Mater., Kyushu Univ., Fukuoka
fDate :
July 28 2008-Aug. 1 2008
Abstract :
Nanocrystalline FeSi2 (NC-FeSi2) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi2 targets. The NC-FeSi2 films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi2/p-type Si and n-type NC-FeSi2/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics. For the p-i-n heterojunctions, i-Si thin layer reduced the leakage current and improved photovoltaic properties as compared to the p-n heterojunctions. This improvement might be due to the i-Si layer that acts as a leakage blocking layer rather than a light absorption layer.
Keywords :
elemental semiconductors; hopping conduction; iron alloys; leakage currents; metallic thin films; nanostructured materials; photovoltaic effects; silicon; silicon alloys; sputter deposition; FeSi2-Si-Si; Si(111) substrates; electric conductivity; facing-targets DC sputtering; heterojunctions; hopping conduction; leakage current; n-type nanocrystalline; p-i-n heterojunctions; p-type Si; photovoltaic property; temperature 293 K to 298 K; Conductive films; Conductivity; Heterojunctions; Leakage current; PIN photodiodes; Photovoltaic systems; Semiconductor films; Solar power generation; Sputtering; Temperature dependence; iron disilicide; photovoltaics; sputtering; thin films;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802142