Title :
High-efficiency, 0.8 M2 thin-film Si modules fabricated by a batch process
Author :
Krudtad, P. ; Hongsingthong, A. ; Chinnavornrungsee, P. ; Sitthiphol, N. ; Tachakittiroje, W. ; Piromjit, C. ; Pingate, N. ; Sichanugrist, P.
Author_Institution :
Nat. Sci. & Technol. Dev. Agency, Klong Luang
fDate :
July 28 2008-Aug. 1 2008
Abstract :
A large batch PECVD system has been developed in order to deposit a-Si/a-SiGe and a-Si/muc-Si solar cell on 20 pieces of SnO2-coated glass with the area of 0.8 m2. Newly designed electrode has been used in order to achieve uniform muc-Si film on 0.8 m2. Beside muc-Si nlayer, p(muc-SiO) has been used in the p-layer of the bottom cell in order to increase the module performance. Alcohol flush has been used in order to minimize the boron contamination. Furthermore, ZnO/Ag back electrode has been used instead of ZnO/Al electrode. Up to now, initial module efficiency of more than 6.5% and 7% have been achieved with a-SiO/a-Si/a-SiGe and a-Si/muc-Si cell structure.
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor device manufacture; semiconductor industry; semiconductor thin films; silicon; solar cells; thin film devices; Si; SiO-Si-SiGe; ZnO/Ag back electrode; alcohol flush; batch process fabrication; boron contamination; cell structure; large batch PECVD system; module performance; solar cell; thin-film modules; Boron; Commercialization; Contamination; Electrodes; Frequency; Glass; Photovoltaic cells; Semiconductor thin films; Sputtering; Zinc oxide;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802144
