Title :
What we have learned on flash memory reliability in the last ten years
Author :
Cappelletti, Paolo ; Bez, Roberto ; Modelli, Alberto ; Visconti, Angelo
Author_Institution :
STMicroelectronics, Brianza, Italy
Abstract :
In this paper we report the most important progresses on flash memory reliability in the last decade. The capability of mastering the degradation mechanisms, mainly related to the generation of localized defects in the tunnel oxide during writing operations, comes from the large know-how developed in more that 20 years of research and industrial activity.
Keywords :
flash memories; integrated circuit reliability; integrated circuit technology; degradation mechanisms; flash memory reliability; localized defects; tunnel oxide; writing operations; Degradation; Electron traps; Flash memory; Hot carriers; Interface states; Research and development; Threshold voltage; Tunneling; Voltage control; Writing;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419196
