DocumentCode :
3001588
Title :
High energy oxide traps and anomalous soft-programming in flash memories
Author :
Ielmini, D. ; Spinelli, A.S. ; Robustelli, M. ; Lacaita, A.L. ; Chiavarone, L. ; Visconti, A.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
493
Lastpage :
496
Abstract :
We study the energy location of traps responsible for anomalous stress-induced leakage current (SILC) in flash cells. Experimental technique based on the analysis of the SILC under injection of drain-accelerated electrons is presented. We provide evidence for the existence of high-energy traps assisting the leakage process, sensing also the electron energy at the SILC spot and verifying that this energy correlates with the position along the channel. Finally, the behavior of SILC-affected cells under soft-programming condition is discussed with reference to the energy location of oxide traps.
Keywords :
electron traps; flash memories; leakage currents; semiconductor device reliability; anomalous soft-programming; drain-accelerated electrons; electron energy; energy location; experimental technique; flash memories; high energy oxide traps; stress-induced leakage current; Anodes; Cathodes; Degradation; Electron traps; Leakage current; Nonvolatile memory; Research and development; Robustness; Tail; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419197
Filename :
1419197
Link To Document :
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