Title :
The effects of annealing ambients on dielectric strength of gate oxides with tungsten polycide gate
Author :
Tanigaki, Yukio ; Moribe, Shunji ; Itagaki, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The effects of annealing ambients (Ar, N/sub 2/, and O/sub 2/) on the dielectric strength of silicon dioxide with a CVD WSi/sub 2/ polycide gate were investigated. The degradation of the dielectric strength of the gate oxide and Si precipitation at the edge of the WSi/sub 2/ polycide gate were observed only for devices annealed in Ar ambient. The dielectric strength of the gate oxide decreased with higher annealing temperature, longer annealing time, and larger composition ration (Si/W) of the WSi/sub 2/ film. A mechanism for the effects is proposed.<>
Keywords :
annealing; dielectric thin films; electric strength; metallisation; oxidation; silicon compounds; tungsten compounds; (Ar; CVD; N/sub 2/; O/sub 2/; SiO/sub 2/-WSi/sub 2/; annealing ambients; annealing temperature; annealing time; dielectric strength; gate oxides; polycide gate; precipitation; Annealing; Argon; Breakdown voltage; Dielectric breakdown; Electric breakdown; Plasma measurements; Plasma temperature; Silicon compounds; Tungsten; Voltage measurement;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14192
