Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET

Author

Watanabe, Takeshi ; Takayanagi, Marjko ; Kojima, Kenji ; Ishimaru, Kazunari ; Ishiuchi, Hidemi ; Sekine, Katsuyuki ; Yamasaki, Hiroyuki ; Eguchi, Kazuhiro

Author_Institution

SoC R&D Center, Toshiba Corp., Yokohama, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

507

Lastpage

510

Abstract

65 nm gate length HfSiON-CMOSFET was fabricated with various Hf concentrations and gate spacers in view of device performance and reliability. The negative charges are generated in HfSiON/Si-substrate interface at the gate edge region for HfSiON with high Hf concentration. SiN offset spacer suppresses the charge generation and the degradation of drive current. Even so, HfSiON with low Hf concentration is higher at performance and reliability than that with high one. Moreover, the optimized HfSiON shows scalability of up to hp45 nm low standby power (LSTP).

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; nanoelectronics; semiconductor device measurement; semiconductor device reliability; 65 nm; CMOSFET; Hf concentration; HfSiON-Si; charge generation; device performance; device reliability; gate spacers; low standby power; negative charges; Beak; Birds; CMOSFETs; Charge carrier density; Dielectrics; Fluctuations; Hafnium; MOSFET circuits; Oxidation; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419202

Filename

1419202