Title :
Raman scattering controlled free-carrier and composition distribution in solar cell structures
Author :
Mintairov, A.M. ; Khvostikov, V.P. ; Larionov, V.R. ; Paleeva, E.V. ; Sorokina, S.V.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
A new contactless method using Raman scattering spectroscopy for the determination of the free-carrier density (FCD) and the composition distribution across the thickness of III-V multi-layer solar cell (SC) structures is developed and used for the optimization of an AlGaAs and GaSb SC technology. The method includes a step anodic oxidation of a SC structure and an analysis of Raman spectra (RS) from optical phonons and phonon-plasmon modes of different layers. The method provides simultaneous measurements of the element composition and the thickness (D) of the structure layers (for D>4 nm) together with the FCD(n, p=1015-1020 cm-3, for D>20 nm). The results of measurements of FCD and composition distributions of the LPE grown AlGaAs and Zn-diffused GaSb solar cell structures are presented and discussed
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; carrier density; gallium arsenide; gallium compounds; liquid phase epitaxial growth; semiconductor device testing; semiconductor growth; solar cells; AlGaAs; GaAs; GaSb; III-V semiconductor multilayer cells; LPE growth; Raman scattering spectroscopy; composition distribution; contactless measurement method; element composition; free-carrier density; optical phonons; phonon-plasmon modes; solar cell structures; step anodic oxidation; thickness; Gallium arsenide; Optical scattering; Oxidation; P-n junctions; Phonons; Photovoltaic cells; Raman scattering; Spectroscopy; Substrates; Thickness measurement;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520653
