DocumentCode :
3001753
Title :
Characteristics of ALD HfSiOx using new Si precursors for gate dielectric applications
Author :
Kim, Yun-Seok ; Lim, Ha Jin ; Jung, Hyung-Suk ; Lee, Jong-Ho ; Park, Jae-Eun ; Han, Sung Kee ; Lee, Jung Hyoung ; Doh, Seok-Joo ; Kim, Jong Pyo ; Lee, Nae-In ; Kang, Ho-Ky ; Chung, Youngsu ; Hae Young Kim ; Nam Kyu Lee ; Ramanathan, Sasangan ; Seidel, Tom
Author_Institution :
Syst. LSI Div., Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
511
Lastpage :
514
Abstract :
We have successfully developed a process for ALD HfSiOx that can provide excellent compositional control by using new Si precursors, Si2Cl6 (HCDS) and SiH[(CH3)2]3 (tDMAS). In addition, comparisons of electrical properties of HfSiOx using two Si precursors have been performed. CMOSFET with HfSiOx using HCDS results in better reliability characteristics than tDMAS. Superior electron and hole mobility (100% and 90% of universal curve at 0.8MV/cm) are also achieved with HCDS. Consequently, HCDS has the potential to be used as a Si precursor for ALD HfSiOx.
Keywords :
CMOS integrated circuits; MOSFET; atomic layer deposition; dielectric materials; electron mobility; hafnium compounds; hole mobility; semiconductor device reliability; silicon compounds; ALD; CMOSFET; HfSiO; Si precursors; Si2Cl6; SiH[(CH3)2]3; compositional control; electrical properties; electron mobility; gate dielectric applications; hole mobility; reliability characteristics; Annealing; Atomic layer deposition; CMOSFETs; Charge carrier processes; Dielectric substrates; Electron mobility; Fabrication; Hafnium; Large scale integration; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419203
Filename :
1419203
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3001753
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