Photoreflectance mapping of InGaAs HEMT wafers

Author

Sugiyama, Hiroki ; Nakanishi, Hideo ; Yokoyama, Haruki ; Wada, Kazumi

Author_Institution

NTT Syst. Electron. Lab., Kanagawa, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

129

Lastpage

132

Abstract

Screening of device epilayers is now accepted as a critical issue in the research and development of high-performance semiconductor devices. Photoreflectance (PR) is very attractive for this purpose, since the composition and the built-in dc electric field of wafers can be estimated by analyzing the Franz-Keldysh oscillations (FKOs) in the PR spectra. Additionally, the laser excitation used is extremely weak which makes this method effectively non-invasive. Despite of these advantages, to our knowledge, on-wafer mapping by PR has not been reported. This paper presents PR mapping equipment and its application to InAlAs/InGaAs HEMT wafers. We visualize the non-uniform composition of InAlAs layers to show that PR mapping is a powerful tool for noninvasive wafer screening

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; photoreflectance; reflectivity; semiconductor epitaxial layers; Franz-Keldysh oscillation; InGaAs; InGaAs HEMT wafer; built-in DC electric field; composition; laser excitation; noninvasive epilayer screening; photoreflectance mapping; semiconductor device; Electric variables measurement; Etching; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Laboratories; Laser excitation; Ohmic contacts; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600071

Filename

600071