Carbon nanotube electronics and optoelectronics

Author

Avouris, Ph. ; Afzali, A. ; Appenzeller, J. ; Chen, J. ; Freitag, M. ; Klinke, C. ; Lin, Y.-M. ; Tsang, J.C.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

525

Lastpage

529

Abstract

We discuss recent developments in our research on single carbon nanotube field-effect transistors and light emitting and detecting devices. Specifically, we show that by using either double gate devices, or selective charge-transfer doping, we can convert Schottky barrier CNTFETs into bulk-switched devices, ambipolar CNTFETs into unipolar devices, while at the same time enhance both the ON and OFF state device characteristics. Under ambipolar conditions CNTFETs can be used as light emitters via e-h recombination, while light irradiation of CNTFETs leads to photoconductivity. Thus, the CNTFET can be used as a high performance switch, a light source and a light detector.

Keywords

Schottky barriers; carbon nanotubes; field effect transistors; optoelectronic devices; Schottky barrier CNTFET; ambipolar CNTFET; bulk-switched devices; carbon nanotube; detecting devices; device characteristics; double gate devices; e-h recombination; field-effect transistors; high performance switch; light detector; light emitting devices; light irradiation; light source; optoelectronics; photoconductivity; selective charge-transfer doping; unipolar devices; Artificial intelligence; CNTFETs; Carbon nanotubes; Doping; FETs; Light emitting diodes; Photoconductivity; Schottky barriers; Schottky gate field effect transistors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419208

Filename

1419208