Schottky barrier enhancement on n-InP solar cell applications

Author

Clausen, Thomas ; Leistiko, Otto

Author_Institution

Dept. of Phys., Tech. Univ. Denmark, Lyngby, Denmark

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1807

Abstract

It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; annealing; indium compounds; semiconductor device metallisation; semiconductor device testing; solar cells; 1.35 eV; AuZnCr; InP; Schottky barrier enhancement; annealing sequences; application; energy bandgap; epitaxial growth; metallization; n-InP solar cell; Annealing; Contacts; Indium phosphide; Metallization; Photonic band gap; Photovoltaic cells; Schottky barriers; Schottky diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520654

Filename

520654