Title :
Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits
Author :
Xiaoli Xu ; Sporea, Radu A. ; Xiaojun Guo
Author_Institution :
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
In this work, the source-gated transistor (SGT) structure is proposed for implementation of the driving transistor in active-matrix organic light-emitting diode (AMOLED) display pixel circuits. The benefits of using the SGT were evaluated through numerical device simulations based on the well-developed low temperature polycrystalline silicon (LTPS) and indium-gallium-zinc-oxide (IGZO) material models. The simulation results prove that significant reductions of the layout area and the power consumption can be achieved for both LTPS and IGZO technologies by using the SGT device structure, which in turn proves that the SGT device structure is potentially an ideal choice for achieving efficient AMOLED pixel circuits.
Keywords :
LED displays; elemental semiconductors; gallium compounds; indium compounds; numerical analysis; organic light emitting diodes; silicon; transistors; IGZO; InGaZnO; LTPS; SGT structure; Si; active-matrix organic light-emitting diode; area-efiicient AMOLED display pixel circuit; indium-gallium-zinc-oxide material model; low temperature polycrystalline silicon; numerical device simulation; power consumption; power-efiicient AMOLED display pixel circuit; source-gated transistor structure; Active matrix organic light emitting diodes; Layout; Logic gates; Power demand; Thin film transistors; Active-matrix; amorphous metal oxide semiconductor; organic light emitting diode (OLED); polycrystalline silicon; thin-film transistor;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2013.2293181
