Title :
Selective CVD tungsten contact plug technology with plasma pre-treatment
Author :
Yamazaki, Osamu ; Shimizu, Shin ; Sakamoto, Hiromi ; Mitsuhashi, Katsunori ; Ohtake, Koui ; Koba, Masayoshi
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
Low-resistance contact plug technology using selective CVD of W by the SiH4 reduction of WF6 with SF6 pretreatment was developed. This technology solved problems such as encroachment, wormholes, Si consumption, and poor adhesion encountered in only the H2-reduction system or only the SiH4-reduction system without pretreatment. The contact resistance in this system is lower than that in conventional metallization with Al-Si/Si contacts. It is predicted that this technology will become important for improving the reliability of the interconnection for submicron VLSI
Keywords :
VLSI; chemical vapour deposition; contact resistance; integrated circuit technology; metallisation; surface treatment; tungsten; SF6 pretreatment; SiH4 reduction; W; WF6; contact plug technology; contact resistance; interconnection; metallization; plasma pre-treatment; reliability; selective CVD; submicron VLSI; Adhesives; Contact resistance; Etching; Laboratories; Plasma applications; Plasma measurements; Plasma properties; Plugs; Sulfur hexafluoride; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78018
