Title :
Manufacturable InP-based HBT technology for low voltage millimeter-wave and microwave communications
Author :
Tran, L.T. ; Cowles, J.C. ; Yang, L.W. ; Block, T.R. ; Grossman, P.C. ; Kobayashi, K.W. ; Wojtowicz, M. ; Oki, A.K. ; Steit, D.C. ; Elliott, J.H. ; Callejo, L.G. ; Yen, H.C. ; Rezek, E.D.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
A manufacturable InAlAs/InGaAs HBT and MMIC technology was developed for low voltage operation of communications. Materials quality control was achieved through photoreflectance technique, while critical device parameters were used in monitoring process uniformity and reproducibility. A few broadband MMICs and linear amplifiers based on statistical SPICE modeling in design accomplished new performance records, and InP-based power HBTs demonstrated promising power performance at L- and K-band frequencies
Keywords :
III-V semiconductors; SPICE; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit technology; microwave bipolar transistors; microwave power transistors; photoreflectance; power bipolar transistors; InAlAs-InGaAs; InP; InP HBT technology; K-band; L-band; broadband MMIC; linear amplifier; low voltage operation; material quality control; microwave communication; millimeter-wave communication; photoreflectance; power transistor; process reproducibility; process uniformity; statistical SPICE model; Broadband amplifiers; Condition monitoring; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Low voltage; MMICs; Manufacturing; Quality control; Reproducibility of results;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600072
