0.25 μm emitter InP SHBTs with fT = 550 GHz and BVCEO > 2V

This paper report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f_T = 550 GHz and f_MAX = 255 GHz, with BV_CEO = 2.1 V. The devices exhibit record f_T performance of bipolar transistors at operating current densities in excess of 19 mA/μm², achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25×8 μm² device yield an R_TH= 5.1°C/mW, corresponding to a ΔT_j = 173°C at 34 mW of power dissipation at peak operating conditions.