Title :
Ultra high-speed 0.25-μm emitter InP-InGaAs SHBTs with fmax of 687 GHz
Author :
Yu, Daekyu ; Choi, Kwangsik ; Lee, Kyungho ; Kim, Bumman ; Zhu, H. ; Vargason, K. ; Kuo, J.-M. ; Pinsukanjana, P. ; Kao, Y.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
We have developed novel but simple process techniques for high speed InP SHBTs. For parasitic reduction, the collector layer is undercut using an etch-stop layer, the base pad is isolated, and the emitter metal is widened using thick plated gold. For transit time reduction, the SHBT employs InGaAs base with graded In-composition and InGaAlAs emitter setback with graded Al-composition. Maximum extrapolated fmax of about 687 GHz with fT of 215 GHz is achieved for 0.25 × 8 μm2 emitter area devices at Ic = 8 mA and Vce = 15 V. This data clearly shows that the optimized conventional process can offer direct implementation of InP HBT for high-speed electronic circuit fabrication.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit layout; submillimetre wave integrated circuits; 0.25 micron; 15 V; 687 GHz; 8 mA; InP-InGaAs; electronic circuit fabrication; emitter metal; etch-stop layer; high speed InP SHBT; parasitic reduction; thick plated gold; transit time reduction; Contact resistance; Cutoff frequency; Double heterojunction bipolar transistors; Etching; Fabrication; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parasitic capacitance;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419219
