DocumentCode :
30022
Title :
A Class-G Switched-Capacitor RF Power Amplifier
Author :
Yoo, Sang-Min ; Walling, Jeffrey S. ; Degani, O. ; Jann, Benjamin ; Sadhwani, Ram ; Rudell, J.C. ; Allstot, David J.
Author_Institution :
Qualcomm Atheros, San Jose,
Volume :
48
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
1212
Lastpage :
1224
Abstract :
A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%.
Keywords :
EER; Envelope elimination and restoration; RF DAC; SCPA; polar transmitter; power amplifier; switched-capacitor power amplifier;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2252754
Filename :
6506135
Link To Document :
بازگشت