Title :
Analysis of SIMOX buried oxide leakage by direct measurements
Author :
Anc, M.J. ; Krull, W.A.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
Analysis of the electrical performance of SIMOX BOX require studies of both types of this material, standard dose and low dose. Electrical characterization techniques used for thermal and deposited oxides are applicable to SIMOX. Device structures, while providing a wide range of characteristics of the BOX, require sequences of fabrication steps to precede the measurements. In the material development environment, a fast method of evaluation of the properties of the material is of special value. In this paper, we will show the analyses of the SIMOX BOX leakage characteristics by direct measurements based on copper sulfate electrolytic contact
Keywords :
SIMOX; buried layers; leakage currents; semiconductor-electrolyte boundaries; CuSO4; SIMOX buried oxide leakage; copper sulfate electrolytic contact; direct measurements; electrical characteristics; Capacitors; Contacts; Copper; Electric variables; Electrodes; Fabrication; Ion beams; Leakage current; Thermal conductivity; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526466
