Title :
Increase in EM resistance by planarizing dielectric film over Al wirings
Author :
Isobe, A. ; Numazawa, Y. ; Sakamoto, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The relation between EM (electromigration) characteristics and interlayer dielectric film structure is described. It was found that a well-planarized interlayer significantly increases EM resistance for underlying Al wirings. This EM improvement is attributed to reinforcement and crack suppression at interlayer sidewalls. A constant atom flux model is proposed that explains the mechanism for this phenomenon
Keywords :
aluminium; dielectric thin films; electromigration; metallisation; reliability; surface treatment; Al wirings; constant atom flux model; crack suppression; electromigration resistance; interlayer dielectric film structure; interlayer sidewalls; planarization; Dielectric films; Dielectric materials; Grain boundaries; Optical films; Planarization; Scanning electron microscopy; Stress; Testing; Very large scale integration; Wiring;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78019
