DocumentCode
3002240
Title
Increase in EM resistance by planarizing dielectric film over Al wirings
Author
Isobe, A. ; Numazawa, Y. ; Sakamoto, M.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1989
fDate
12-13 Jun 1989
Firstpage
161
Lastpage
167
Abstract
The relation between EM (electromigration) characteristics and interlayer dielectric film structure is described. It was found that a well-planarized interlayer significantly increases EM resistance for underlying Al wirings. This EM improvement is attributed to reinforcement and crack suppression at interlayer sidewalls. A constant atom flux model is proposed that explains the mechanism for this phenomenon
Keywords
aluminium; dielectric thin films; electromigration; metallisation; reliability; surface treatment; Al wirings; constant atom flux model; crack suppression; electromigration resistance; interlayer dielectric film structure; interlayer sidewalls; planarization; Dielectric films; Dielectric materials; Grain boundaries; Optical films; Planarization; Scanning electron microscopy; Stress; Testing; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1989.78019
Filename
78019
Link To Document