DocumentCode :
3002259
Title :
Status and outlook of emerging nonvolatile memory technologies
Author :
Müller, Gerhard ; Happ, Thomas ; Kund, Michael ; Lee, Gill Yong ; Nagel, Nicolas ; Sezi, Recai
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
567
Lastpage :
570
Abstract :
This paper reviews the concept, status and challenges of emerging nonvolatile memory technologies. The technologies that are discussed and compared to state of the art flash technology are the conductive bridging RAM (CBRAM), the ferro-electric RAM (FeRAM), the magneto-resistive RAM (MRAM), the organic RAM (ORAM) and the phase change RAM (PCRAM).
Keywords :
ferroelectric storage; flash memories; magnetoresistive devices; random-access storage; Flash technology; conductive bridging RAM; ferro-electric RAM; magneto-resistive RAM; nonvolatile memory; organic RAM; phase change RAM; Bridge circuits; Capacitors; FETs; Ferroelectric films; Material storage; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419223
Filename :
1419223
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3002259
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