DocumentCode :
3002296
Title :
Fabrication and Characterization of Room Temperature Nuclear Radiation CdZnTe 3×3 Pixel Array Detector
Author :
Li Xia ; Chu Junhao ; Li Longxia ; Dai Ning ; Zhang Shengdong ; Zhang Fujia
Author_Institution :
Shenzhen Graduated Sch., Peking Univ., Shenzhen, China
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
The detector-grade crystal was manufactured by modify bridgman method in Yinnel Tec. The resistivity of the CZT is ~1011(Ω.cm). Their high resistivity caused low leakage current. We fabricated 3×3 pixel array detector. We measure spectral response of the detector, through Gaussian Fitting, The energy resolution of the detector is 23.7%(28.9 keV FWHM) for 122 keV 57Co and 17.9%(117.8 keV FWHM) for 662 keV 137Cs, respectively. The spectrum is gauss distributing. Low energy band tail is sharp. It shows that effect of hole is weak. the detector has no polarization.
Keywords :
X-ray detection; cadmium compounds; leakage currents; zinc compounds; CdZnTe; FWHM; Gaussian fitting; bridgman method; detector-grade crystal; electron volt energy 117.8 keV; electron volt energy 122 keV; electron volt energy 28.9 keV; electron volt energy 662 keV; gauss distributing; high resistivity; low energy band tail; low leakage current; nuclear radiation; pixel array detector; spectral response; temperature 293 K to 298 K; Arrays; Conductivity; Crystals; Detectors; Energy resolution; Leakage current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
ISSN :
2156-8464
Print_ISBN :
978-1-4577-0909-8
Type :
conf
DOI :
10.1109/SOPO.2012.6270904
Filename :
6270904
Link To Document :
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