AC-photoconductivity of amorphous gallium phosphide (a-GaP) formed by nitrogen ion beam assisted deposition

Author

Kubota, Hiroshi ; Tashiro, Tomohiro ; Hiyayu, Tsuyoshi ; Chikushima, Takayuki ; Fujiyoshi, Takanori ; Miyagawa, Ryuji ; Onuki, Masami

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ., Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1814

Abstract

Because amorphous III-V compounds have various localized states that play important roles in carrier trapping and scattering centers, and strongly degrade electrical performance, the formation process for a-GaP is considered for reducing these states, effectively and selectively. We report in this paper that the valence-band tail state has successfully disappeared by using nitrogen ion-beam-assisted deposition, and then the mobility band gap has expanded to the 3 eV range. The gap states are also cleared for a-GaP:N according to accurate AC photoconductivity technique

Keywords

III-V semiconductors; amorphous semiconductors; electron traps; energy gap; gallium compounds; high-frequency effects; ion beam applications; photoconductivity; semiconductor growth; semiconductor thin films; vacuum deposition; valence bands; 3 eV; AC-photoconductivity; GaP; a-GaP; amorphous III-V compound; amorphous gallium phosphide; carrier trapping; electrical performance; gap states; localized states; mobility band gap; nitrogen ion beam assisted deposition; scattering centers; valence-band tail state; Amorphous materials; Degradation; Electron beams; Gallium compounds; III-V semiconductor materials; Ion beams; Ion sources; Nitrogen; Optical scattering; Orifices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520656

Filename

520656