Title :
Series Junction Resistance and Its Spatial Variation from Graded Barrier Structure of DBR Layers in 980nm VCSELS
Author :
Huang, M. ; Wu, J. ; Cui, H.Y. ; Qian, J.Q.
Author_Institution :
Dept. of Appl. Phys., Beihang Univ., Beijing, China
Abstract :
Series junction resistance and its spatial variation due to temperature effect from the graded barrier structure of AlxGa1-xAs DBR reflectors in 980nm VCSELs are modeled by combining thermionic emission model and finite difference method. The minimum of DBR resistance and the temperature-induced spatial variation of the resistance are calculated to optimize the DBR structure and improve the thermal effect of the VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electrical resistivity; finite difference methods; gallium arsenide; laser cavity resonators; semiconductor lasers; surface emitting lasers; thermionic emission; AlxGa1-xAs; DBR layers; DBR reflectors; DBR resistance; DBR structure; VCSEL; finite difference method; graded barrier structure; series junction resistance; temperature-induced spatial variation; thermal effect; thermionic emission model; wavelength 980 nm; Distributed Bragg reflectors; Junctions; Photonic band gap; Resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6270906
