• DocumentCode
    3002425
  • Title

    Resistive contrast imaging applied to multilevel interconnection failure analysis

  • Author

    Cole, Edward I., Jr.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • fYear
    1989
  • fDate
    12-13 Jun 1989
  • Firstpage
    176
  • Lastpage
    182
  • Abstract
    Resistive contrast imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map can be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI can be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed
  • Keywords
    failure analysis; integrated circuit testing; metallisation; scanning electron microscopy; image quality; integrated circuit; level differentiation; metal shorts; multilevel interconnection failure analysis; opens; relative resistance map; resistive contrast imaging; scanning electron microscope; two-level interconnection devices; Circuit testing; Displays; Electron beams; Failure analysis; Image analysis; Image quality; Integrated circuit interconnections; Laboratories; Microelectronics; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1989.78020
  • Filename
    78020