Title :
Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks
Author :
Yang, Lianfeng ; Watling, J.R. ; Adam-Lema, Fikru ; Asenov, Asen ; Barker, John R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths down to 25nm have been investigated.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; interface roughness; light scattering; semiconductor device models; silicon; Si; ensemble Monte Carlo device simulation; high-k gate stacks; interface roughness; soft-optical phonon scattering; strained Si n-MOSFET; Biomedical optical imaging; Capacitive sensors; Dielectric devices; Electromagnetic compatibility; Hafnium oxide; MOSFET circuits; Medical simulation; Optical scattering; Permittivity; Phonons;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419232
